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Trench-type narrow InGaAs quantum wires fabricated on a (311) A InP substrate

Applied Physics Letters (2001) 78(1) 76-78
DOI: 10.1063/1.1337635
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Abstract

InGaAs quantum wires (QWRs) with cross sections as narrow as 10 nm×20 nm have been fabricated on a (311)A InP V-grooved substrate under an As2 source. Trench-type InGaAs QWRs consist of (111)A and (331)B facets with an angle of about 22°. Cathode-luminescence and photoluminescence measurements confirmed the luminescence peak arising from the QWRs. © 2001 American Institute of Physics.

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Sugaya, T., Ogura, M., Sugiyama, Y., Matsumoto, K., Yonei, K., & Sekiguchi, T. (2001). Trench-type narrow InGaAs quantum wires fabricated on a (311) A InP substrate. Applied Physics Letters, 78(1), 76–78. https://doi.org/10.1063/1.1337635

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