Preparation and characterization of indium oxide (In2O3) films by activated reactive evaporation

Abstract

The electrical and optical properties of In2O3 films prepared at room temperature by activated reactive evaporation have been studied. Hall effect measurements at room temperature show that the films have a relatively high mobility 15cm2v-1s-1, high carrier concentration 2.97 × 1020/cm3, with a low resistivity ρ = 1.35 × 10-3 ohm cm. As-prepared film is polycrystalline. It shows both direct and indirect allowed transitions with band gaps of 3.52 eV and 2.94 eV respectively.