An x-band bi-directional transmit/receive module for a phased array system in 65-nm CMOS

Abstract

We present an X-band bi-directional transmit/receive module (TRM) for a phased array system utilized in radar-based sensor systems. The proposed module, comprising a 6-bit phase shifter, a 6-bit digital step attenuator, and bi-directional gain amplifiers, is fabricated using 65-nm CMOS technology. By constructing passive networks in the phase-shifter and the variable attenuator, the implemented TRM provides amplitude and phase control with 360◦ phase coverage and 5.625◦ as the minimum step size while the attenuation range varies from 0 to 31.5 dB with a step size of 0.5 dB. The fabricated T/R module in all of the phase shift states had RMS phase errors of less than 4◦ and an RMS amplitude error of less than 0.93 dB at 9–11 GHz. The output 1dB gain compression point (OP1dB) of the chip was 5.13 dBm at 10 GHz. The circuit occupies 3.92 × 2.44 mm2 of the chip area and consumes 170 mW of DC power.