Robust Pt-based nanogap electrodes with 10 nm scale ultrafine linewidth

Abstract

Robust Pt-based nanogap electrodes with a 10 nm scale ultrafine linewidth were fabricated on SiO2/Si substrates by electron-beam lithography. The structures of the fabricated electrodes remained unchanged up to temperatures of 773 K. The robust thermal stability of the fabricated electrodes in comparison with that of Au-based nanogap electrodes was discussed based on Rayleigh instability. A chemically assembled single-electron transistor was prepared by chemisorbing a 6 nm sized Au nanoparticle between the Pt-based nanogap electrodes, and the transistor showed clear and ideal Coulomb diamonds up to 180 K.