Effects of plasma immersion ion nitridation on dielectric properties of Hf O2

Abstract

Plasma immersion ion nitridation is used to produce thin Hf O2 films with improved thermal and electrical properties. The film composition is investigated by examining the chemical shifts of the Hf 4f, Si 2p, and N 1s core-level spectra using x-ray photoelectron spectroscopy. The improved thermal stability and interfacial microstructure are further confirmed by high-resolution cross-sectional transmission electron microscopy. Electrical studies show an equivalent oxide thickness of about 1.25 nm, a negligible hysteresis of about 5 mV, and a low fixed charge density. © 2007 American Institute of Physics.