Abstract
CMOS/bipolar technology, designated as high-performance bipolar/CMOS (Hi-BiCMOS) technology, in which a bipolar transistor of 4-GHz cutoff frequency is combined with standard CMOS devices on the same chip, has been applied to a processor for the first time. Under a design strategy to provide high integration density using the CMOS circuit and accelerate the critical paths by the Hi-BiCMOS circuits, new Hi-BiCMOS circuits with low-voltage swing have been proposed and success-fully applied to the 32-bit arithmetic unit and the 128-kbit ROM with bipolar drivers to drive a heavy load capacitance. A 7.2-ns 32-bit carry propagation delay time and 17-ns ROM access cycle time have been achieved by 2-µm Hi-BiCMOS technology. A minicomputer CPU with a 60-MHz machine cycle can be implemented with these circuits. Copyright © 1986 by the Institute of Electrical and Electronics Engineers, Inc.
Cite
CITATION STYLE
Hotta, T., Masuda, I., Maejima, H., Ueno, M., Iwamura, M., Kurita, K., & Hotta, A. (1986). CMOS/Bipolar Circuits for 60-MHz Digital Processing. IEEE Journal of Solid-State Circuits, 21(5), 808–813. https://doi.org/10.1109/JSSC.1986.1052611
Register to see more suggestions
Mendeley helps you to discover research relevant for your work.