Growth of Fe-doped semi-insulating InP by MOCVD

Abstract

Growth of InP by metalorganic chemical vapor deposition (MOCVD) has been studied using the adduct Me3In·PMe3 as the In source. The optimum growth temperature was found to be in the range of 600-650°C giving growth rates of ∼ 6 μm h-1 Background carrier concentrations of n = (1-2)x1015 cm-3 were obtained routinely. The effects of growth temperature, substrate preparation and V/III ratio on surface morphology are discussed. The first report of the MOCVD growth of semi-insulating InP is presented. This has been accomplished by means of Fe-doping, using ferrocene as the dopant source. Resistivities as high as 2×108 ω cm have been measured. © 1984.