Charge carrier kinetics in GeSi/Si quantum dots probed by mid-infrared radiation

Abstract

The mid-infrared photo-induced absorption relaxation kinetics of the self-assembled array of GeSi quantum dots in Si matrix was studied in the conditions of short pulsed interband optical excitation. The measured absorption decay curves directly show the temporal evolution of the population of the QD ground states. The analysis of the experimental data allowed us to estimate characteristic recombination and capture times, and the electron localization energy in the vicinity of QD.