850 nm VCSEL with sub quantum well and p-type δ-doping in the active layers for improved high-speed and high-temperature performance

Abstract

Thermal rollover is one of the fundamental limitations that affect the output power and modulation bandwidth of high-speed laser in monolithic laser integrated circuits (ICs). Herein, an 850 nm vertical cavity surface emitting laser (VCSEL) with p-doping and sub quantum well (sub QW) centers active layer is proposed and investigated. The p-doping and sub QW insert in the offset position of each barrier, which are designed for reducing the thermal rollover and increasing the maximum intrinsic modulation bandwidth of the laser. Numerical simulations show that adding the p-doping and sub QW in active region could reduce the threshold currents (Ith), improve the slope efficiency (SE) and delay the thermal rollover in VCSEL. Comparing with previous VCSEL, our proposed VCSEL has excellent high temperature output performance, and the maximum simulation 3-dB bandwidth is 43.9 GHz at 25 °C and 33.1 GHz at 85 °C, respectively. Furthermore, temperature-dependent time-resolved photoluminescence (PL) and PL excitation reveal this novel QW has strong radiative recombination rate, which is suitable for designing active region of high-speed and high power lasers.