Abstract
Simple solvent vapor annealing over QLS film-based OFET devices fabricated from (Pc)Eu[Pc(ONh)8]Eu[Pc(ONh)8] led to a high and balanced ambipolar performance that has never been observed for small molecule single-component-based solution processed devices, with mobilities of 1.71 and 1.25 cm2 V-1 s-1 for holes and electrons, respectively, under ambient conditions.
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CITATION STYLE
Kong, X., Zhang, X., Gao, D., Qi, D., Chen, Y., & Jiang, J. (2015). Air-stable ambipolar field-effect transistor based on a solution-processed octanaphthoxy-substituted tris(phthalocyaninato) europium semiconductor with high and balanced carrier mobilities. Chemical Science, 6(3), 1967–1972. https://doi.org/10.1039/c4sc03492a
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