SnS Quantum Dots as Hole Transporter of Perovskite Solar Cells

Abstract

Perovskite solar cells have achieved comparable power conversion efficiencies as commercial silicon cells, making the issue of long-term operation stability as the most critical scientific factor toward industrial realization. In this work, we introduce SnS quantum dots (QDs) as a new inorganic hole transporting material (HTM) to perovskite solar cells. The SnS QDs decorated with the oleylamine (OAm), oleic acid (OA), and trioctylphosphine (TOP) ligands are prepared through the traditional nonaqueous solvothermal method. Therefore, the as-synthesized SnS QDs can be orthogonally processed onto the top of a triple cation perovskite film, exhibiting a good surface coverage and an excellent hole extraction ability. With careful device engineering towards film thickness, annealing procedure, and ligand exchange on the SnS layer, we have obtained a power conversion efficiency (PCE) of 13.7%. Compared with the 2,2′,7,7′-tetrakis(N,N-di-p-methoxyphenylamine)-9,9′-spirobifluorene (spiro-OMeTAD)-based control device, the SnS-based perovskite solar cell presents a better air stability, showing unaltered device performance after 1000 h storage under ambient conditions.