Abstract
The results of linear augmented-plane-wave electronic structure calculations for the perovskite-type compounds BaPb1-xBixO3 are reviewed in the light of recent experimental measurements of the x-dependent electronic properties near isF(A:). In the metallic regime x<0.35, satisfactory agreement is found between the calculated density of states N(Ep, x) and specific-heat data. The experimental-theoretical ratio suggests an electron-phonon enhancement factor (1 +λ)=2. A similar comparison between the calculated and observed free-carrier plasma energies Ωp(x) yields - 10% agreement over the entire alloy series. © 1985 The Japan Society of Applied Physics.
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CITATION STYLE
Mattheiss, L. F. (1985). Electronic structure of bapb1-xbixo3. Japanese Journal of Applied Physics, 24, 6–9. https://doi.org/10.7567/JJAPS.24S2.6
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