Determination of the dielectric constant of InGaAs based gate stacks by a modified thickness series method

Abstract

The conventional thickness series method for the determination of the dielectric constant of silicon based gate stacks is not applicable for InGaAs based gate stacks due to the low density of states of the semiconductor. Here, we propose a modification of the thickness series method, to alleviate this problem. Since saturation of the accumulation capacitance is not obtained, we propose to measure the accumulation capacitance at a constant effective electric field. The limitations and accuracy of the proposed method are addressed experimentally and theoretically.