Organic junction field-effect transistor

Abstract

The realization and performance of a novel organic field-effect transistor - the organic junction field-effect transistor (JFET) - is discussed. The transistors are based on the modulation of the thickness of a depletion layer in an organic pin junction with varying gate potential. Based on numerical modeling, suitable layer thicknesses and doping concentrations are identified. Experimentally, organic JFETs are realized and it is shown that the devices clearly exhibit amplification. Changes in the electrical characteristics due to a variation of the intrinsic and the p-doped layer thickness are rationalized by the numerical model, giving further proof to the proposed operational mechanism. An organic junction field-effect transistor (OJFET) is realized. The JFETs rely on the modulation of the depletion width in a reversely biased pin junction, which depletes a transistor channel and turns the transistor off. The transistors are discussed in terms of a numerical model describing the depletion layer thickness in organic pin heterostructures, and an experimental proof of concept is given. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.