Dependence of annealing temperature on properties of PZT thin film deposited onto SGGG substrate

Abstract

Pb(Zr0.52Ti0.48)O3 thin films of 1.5 μm thickness were grown on Pt/Ti/Gd3Ga5O12 substrate by RF magnetron sputtering at annealing temperatures ranging from 550℃ to 700℃. We evaluated the residual stress, by using a William-Hall plot, as a function of the annealing temperatures of PZT thin film with a constant thickness. As a result, the residual stresses of PZT thin film of 1.5 μm thickness were changed by varying the annealing temperature. Also, we measured the hysteresis characteristic of PZT thin films of 1.5 μm thickness to evaluate for application of an optoelectronic device.