Memtransistors Based on Non-Layered In2S3 Two-Dimensional Thin Films with Optical-Modulated Multilevel Resistance States and Gate-Tunable Artificial Synaptic Plasticity

Abstract

Memtransistor, a hybrid structure that integrates the function of memristor and transistor, is a promising device prototype for the realization of complex neuromorphic learning owing to its diverse functionality and additional flexibility in emulating synaptic behaviors. Memtransistor of two-dimensional (2D) chalcogenide materials have received many interests as it has distinctive memristive mechanism quite different from conventional oxide memristors. Here, we report a memtransistor based on the two-dimensional thin films (2DTFs) of non-layered \beta -In2S3. The In2S3 2DTFs grown by physical vapor deposition method have microscopically visible grain boundaries (GBs) formed by the stacking and interconnecting of 2D In2S3 flakes. The memtransistors of In2S3 2DTFs show tunable bipolar resistive states with resistance ratio up to 105, endurance over 200 cycles, and a retention time of 104 s. Illumination of laser light from visible and near-infrared are able to induce intermediate resistance states in memtransistors, enabling optical-modulated multilevel memory storage. Also, the memtransistors are able to emulate the synaptic function of long-term potentiation (LTP) and long-term depression (LTD) with tunable synaptic weight in response to presynaptic stimuli of drain/gate pulses. Interestingly, the plasticity of LTP and LTD behavior can be switched in a highly tunable manner by simply varying the gate voltages. The diverse optoelectronic properties and controllable functionality of memtransistors based on the emerging 2D In2S3 offer a useful guide to potential application in electronic memory and artificial synapses.