Accurate value for the absorption coefficient of silicon at 633 nm

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Abstract

High-accuracy transmission measurements at an optical wavelength of 633 nm and mechanical measurements of the thickness of a 13-μm thick silicon-crystal film have been used to calculate the absorption and extinction coefficients of silicon at 633 nm. The results are 3105 ± 62 cm-1 and 0.01564 ± 0.00031, respectively. These results are about 15% less than current handbook data for the same quantities, but are in good agreement with a recent fit to one set of data described in the literature.

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Geist, J., Schaefer, A. R., Song, J. F., Wang, Y. H., & Zalewski, E. F. (1990). Accurate value for the absorption coefficient of silicon at 633 nm. Journal of Research of the National Institute of Standards and Technology, 95(5), 549–558. https://doi.org/10.6028/jres.095.043

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