Review Article: Overview of lanthanide pnictide films and nanoparticles epitaxially incorporated into III-V semiconductors

Abstract

The incorporation of lanthanide pnictide nanoparticles and films into III-V matrices allows for semiconductor composites with a wide range of potential optical, electrical, and thermal properties, making them useful for applications in thermoelectrics, tunnel junctions, phototconductive switches, and as contact layers. The similarities in crystal structures and lattice constants allow them to be epitaxially incorporated into III-V semiconductors with low defect densities and high overall film quality. A variety of growth techniques for these composites with be discussed, along with their growth mechanisms and current applications, with a focus on more recent developments. Results obtained from molecular beam epitaxy film growth will be highlighted, although other growth techniques will be mentioned. Optical and electronic characterization along with the microscopy analysis of these composites is presented to demonstrate influence of nanoinclusion composition and morphology on the resulting properties of the composite material.