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Control of the lateral growth morphology in GaAs Droplet Epitaxy

Journal of Physics: Conference Series (2010) 244
DOI: 10.1088/1742-6596/245/1/012082
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Abstract

We present the detailed fabrication method of two different GaAs nanostructures with cylindrical symmetry by the Droplet Epitaxy technique. Concentric Multiple Rings or Coupled Rings/Disks are successfully obtained, exploiting the lateral growth around the Ga droplets, through a fine control of the crystallization dynamics. © 2010 IOP Publishing Ltd.

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APA

Somaschini, C., Bietti, S., Sanguinetti, S., Koguchi, N., & Fedorov, A. (2010). Control of the lateral growth morphology in GaAs Droplet Epitaxy. In Journal of Physics: Conference Series (Vol. 244). Institute of Physics Publishing. https://doi.org/10.1088/1742-6596/245/1/012082

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