SOI detector developments

Abstract

The novel particle and radiation detector using a Silicon On Insulator (SOI) technology has been developing by the SOI collaboration since 2005. The SOI technology can be applied to realize an ideal monolithic detector which consists of electrical insulator sandwiched low resistivity thin wafer for electronics and high resistivity thick wafer for sensor without bump bonding. The multilateral developments for both fundamental properties and dedicated application are progressing simultaneously. The one of the most important break through we had achieved is a buried p-well (BPW) technology. This technology help to lead recent various applications for specific scientific interest such as X-ray diffraction analysis, X-ray astronomy and high energy particle detector. We report recent studies of process based improvements, radiation tolerance and high energy particle tracking.