Off-axis sputtered Y1Ba2Cu3O7-δ films on NdGaO3

Abstract

Y1Ba2Cu3O7-δ films have been deposited in situ on twin-free NdGaO3 (100) substrates at ≈ 750°C by off-axis sputtering from a stoichiometric target. Critical temperatures of 89 K, specific resistances at 100 K of ρn(100) = 80 μ cm and ρn (300)/ρn (100) ratios of ≈ 3.1 have been achieved. The extrapolated zero temperature specific resistance, ρn (0) = 16 μΩ cm. The full width at half maximum of the (005) rocking curve, δψ = 0.14°. Only a small amount of 45° grain boundaries could be found (κ45 < 2 × 10-3). The 10 GHz surface resistances (not yet optimized) are below 50 μΩ at 4.2 K and 375 μΩ at 77 K. © 1991.