High bandwidth transimpedance amplifier using FGMOS for low voltage operation

Abstract

In this paper a novel CMOS design of transimpedance amplifier (TIA) suitable for low-voltage low-power application is presented. A floating gate metal oxide semiconductor (FGMOS) transistor is used here in common source configuration to provide active feedback along with a standard MOSFET which acts as input stage of the circuit. Main intend of this work is to minimize supply requirement with increased linearity. The circuit of TIA presented in this paper works only at 1 V supply with small power consumption of 1.1 mW. One of the popular frequency compensation techniques is shunt peaking technique. It is employed here to extend bandwidth. The transimpedance output and − 3 dB bandwidth of proposed circuit are 37.7 dB Ohms and 13.5 GHz, respectively. The input impedance and transfer function is evaluated using mathematical analysis and small signal model of circuit. This is observed that results are improved as compared to well known regulated common gate (RC-G) amplifier.