HYBRID e-BEAM/DEEP-UV EXPOSURE USING PORTABLE CONFORMABLE MASKING (PCM) TECHNIQUE.

Abstract

A thin dichroic resist or an opaque metal is directly applied to a deep-UV resist and is delineated with an e-beam exposure tool conventionally. This intimately contacted pattern now serves as a portable mask that can be a carried with the wafer to a deep-UV blanket exposure station for delineation of the deep-UV resist to produce high aspect ratio images with controlled profiles. In particular, AZ1350J/PMMA and AZ1350J/aluminum/PMMA systems are considered. Sample results showing submicrometer PMMA images in thicknesses ranging from 1. 6 to 1. 9 mu m using a 0. 2 mu m thick AZ PCM and 0. 3- mu m-thick aluminum PCM are presented.