Planar defects in α-Ga2O3 thin films produced by HVPE

Abstract

The defect structure of α -phase gallium oxide thin films was investigated using transmission electron microscopy (TEM). Epitaxial Ga2O3 films were grown via halide vapor-phase epitaxy on c -plane sapphire substrates. TEM analysis revealed a high density of extended planar defects within the films, primarily located along prismatic planes of { 11 2 ¯ 0 } type. Displacement vectors were determined using the invisibility criterion for stacking faults. The study encompassed both planar and cross-sectional views of the films. It is hypothesized that these defects form due to the motion of edge partial dislocations with the 1 3 ⟨ 1 1 ¯ 00 ⟩ Burgers vector. Various mechanisms of their formation have been explored.