Abstract
Electric power windows using an all-transparent oxide photoelectric device have the potential to shield and exploit ultraviolet radiation. Herein, an Al:ZnO embedded large area all-transparent ZnO/NiO electric power window is presented. A large-scale (1-in. square) device fabricated with the structure of FTO/AZO/ZnO/NiO/AgNW exhibits a visible light transmittance >70% and photovoltaic performance with an enhanced power conversion efficiency of 3.13% under UV illumination (λ = 365 nm). The spectral attributes of this heterostructure are analyzed using I–V plots, photoresponse, and photo-carrier lifetime (τ), which reveal the co-occurrence of photovoltaic and pyro-phototronic effects, and τ value tuning from 9 to 38.5 ms by tuning λs. The device exhibits higher efficiency at a λ of 410 nm due to exciton attributed optoelectronics at room temperature. Further, the device demonstrates a 380% enhanced photocurrent value, with speed of <40 µs. The functional use of AZO-based back surface field would improve transparent photovoltaics which can be applied to the on-site power generation of building windows, and protect human beings from harmful UV exposure. It is suggested that the formation of a back-surface field is required to enhance the underlying performance of all-transparent oxide photo-electronics, including solar cells, photodetectors, sensors, and memory devices.
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Ban, D. K., Patel, M., Nguyen, T. T., & Kim, J. (2019). All-Transparent Oxide Photovoltaics: AZO Embedded ZnO/NiO/AgNW Band Selective High-Speed Electric Power Window. Advanced Electronic Materials, 5(10). https://doi.org/10.1002/aelm.201900348
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