Noncontact semiconductor wafer characterization with the terahertz Hall effect

Abstract

We demonstrate noncontact measurements of the Hall mobility of doped semiconductor wafers with roughly 250 μm spatial resolution, using polarization rotation of focused beams of terahertz (THz) radiation in the presence of a static magnetic field. Quantitative and independent images of both carrier density and mobility of a doped semiconductor wafer have been obtained. © 1997 American Institute of Physics.