GaAs pHEMT Cascode Low Noise Amplifier for Wireless Applications

Abstract

This paper presents the design of single-stage low noise amplifier (L/A) for wireless application which has been implemented in a 0.15μm GaAs pHEMT technology. The L/A was designed using cascode topology with feedback techniques which produces better gain and good stability over entire frequency. Measurement and simulation data of S-parameters are compared. With operating voltage supply set at 3V, the total current consumption for the L/A is 18 mA. At 2.4 GHz, this amplifier achieves power gain of 10.2 dB, input reflection coefficient of -8.65 dB and noise figure of 2.9 dB. Argument on the differences of measurement results such as power gain S (2, 1) and output return loss S (2, 2) is justified with an explanation on the parasitic effect that exists in the real circuit.