Abstract
We demonstrate the direct detection of spontaneous polarization in the wurtzite crystal phase of gallium-arsenide (GaAs) nanowires. Using differential phase contrast microscopy (DPC) in a scanning transmission electron microscope, we map the differences in charge distribution between the zinc-blende and wurtzite crystal phases and use twin defects in the zinc-blende phase to quantify the polarization strength. The value of 2.7 × 10-3 C/m2 found for the polarization strength matches well with theoretical predictions. © 2014 AIP Publishing LLC.
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CITATION STYLE
Bauer, B., Hubmann, J., Lohr, M., Reiger, E., Bougeard, D., & Zweck, J. (2014). Direct detection of spontaneous polarization in wurtzite GaAs nanowires. Applied Physics Letters, 104(21). https://doi.org/10.1063/1.4880209
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