Enhanced oxidation power in photoelectrocatalysis based on a micrometer-localized positive potential in a terrace hetero p–n junction

Abstract

Generally, p–n junction-based solar energy conversion has the disadvantage of a loss in potential gain in comparison with the photon energy. In this study, we found a more positive potential for a lateral domain interface of p–n junction than for a conventional p–n junction. A terrace bilayer (TB) p–n junction of phthalocyanine (H2Pc) and 3,4,9,10-perylenetetracarboxylic-bis-benzimidazole (PTCBI) was studied using scanning Kelvin probe microscopy (SKPM), and its electronic properties were analyzed using the contact potential difference (VCPD) data. The analysis of VCPD in the single layer region and the bilayer region (BLR) indicated a vacuum level shift through the electron transfer from PTCBI into indium tin oxide (ITO), from H2Pc into ITO and from H2Pc into PTCBI. Furthermore, the comparison of these VCPD data indicated a micrometer-localized positive potential in the boundary region (BDR) of the terrace bilayer structure of p-type on n-type. The gain difference of the VCPD reached +0.1 V in comparison with the BLR. The phenomena can be explained as a lateral dipole at the p–n junction. Similar phenomena were observed in TB-H2Pc/C60/ITO and TB-H2Pc/PTCBI/Au. The gain was extracted as oxidation power in photoelectrochemistry; i.e., at −0.2 V vs. Ag/AgCl a greater anodic current was observed for a patterned terrace bilayer electrode. Additionally, as a photocatalyst film (i.e., a H2Pc (dot)/PTCBI/PTFE membrane filter), the p–n dot terrace structure showed a higher quantum efficiency (5.1%) than that of the bilayer (3.2%) for the decomposition of acetic acid. The present design and method were utilized to obtain an efficient photocatalyst, especially through the mitigation of potential loss from the photon energy to redox powers without changing the molecular component.