An AlGaN/GaN/Si high electron mobility transistor (HEMT) using a GaN:C buffer with a 2 nm AlGaN electron-blocking layer (EBL) is investigated for the first time for millimeter-wave appli-cations. Compared with the double heterostructure field effect transistor (DHFET), the AlGaN/GaN HEMT with the GaN:C/EBL buffer has a lower vertical leakage, higher thermal stability, and better RF performance. In addition, AlGaN EBL can prevent carbon-related traps from GaN:C and improve electron confinement in 2DEG during high-frequency operation. Finally, a Pout of 31.2 dBm with PAE of 21.7% were measured at 28 GHz at 28 V. These results demonstrated the great potential of HEMTs using GaN:C with AlGaN EBL epitaxy technology for millimeter-wave applications.
CITATION STYLE
Weng, Y. C., Lin, Y. C., Hsu, H. T., Kao, M. L., Huang, H. Y., Ueda, D., … Dee, C. F. (2022). A Novel GaN:C Millimeter-Wave HEMT with AlGaN Electron-Blocking Layer. Materials, 15(3). https://doi.org/10.3390/ma15030703
Mendeley helps you to discover research relevant for your work.