Effects of Zn doping on the surface structure and initial growth processes of InP thin film layers on InP(111)B substrate

Abstract

The effects of Zn atoms as a dopant on the surface structure and initial growth processes on InP(111)B substrate are theoretically investigated on the basis of surface phase diagrams which are obtained by comparing the adsorption energy given by ab initio calculations with the gas-phase chemical potentials. The calculated surface phase diagrams demonstrate that the Zn-incorporated surface is stabilized under the growth conditions with high Zn supply ratio. Furthermore, In atoms tend to easily adsorb on the Zn-incorporated surface as an In-P dimer due to the formation of Zn-P and P-P bonds, implying that the adsorption of In atoms and resultant growth processes are promoted on the Zn-incorporated InP(111)B surface which is stabilized under Zn-rich conditions. These results suggest that effects of Zn doping on the surface structure and initial growth processes are crucial for understanding the bidirectional growth mechanisms of InP nanowires on InP(111)B substrate.