High-differential quantum efficiency operation of GaInAsP/InP membrane distributed-reflector laser on Si

Abstract

The high-external differential quantum efficiency operation of a GaInAsP/InP membrane distributed-reflector laser bonded on a Si substrate was achieved by adopting a short cavity design and reducing the waveguide loss and differential resistance. A threshold current of 0.21 mA, an external differential quantum efficiency of 32% for the front-side output, and a power-conversion efficiency of 12% were obtained with a 32-μm distributed feedback section length, a 50-μm distributed-Bragg-reflector section, and a 0.8-μm stripe width. A side-mode suppression ratio of 41 dB was obtained at a bias current of 1 mA.