The Effect of Mn Dopant on Structural and Optoelectronic Properties of γ-Ga 2 O 3 thin Film Photodetectors

Abstract

The metastable cubic γ -(Ga 1− x Mn x ) 2 O 3 thin films are successfully obtained at high growth temperature by laser molecular beam epitaxy technology. The optoelectronic properties of the solar blind Schottky-type photodetectors (PDs) based on γ -(Ga 1− x Mn x ) 2 O 3 thin films are reported for the first time. In this experimental system, the γ -(Ga 0.96 Mn 0.04 ) 2 O 3 PD exhibits the highest light-to-dark ratio (LDR) of 6.89 × 10 3 , which is two orders of magnitude higher than the pure β -Ga 2 O 3 PD prepared under the same condition. In addition, it shows a fast photoresponse decay speed of about 0.081 s. The results suggest that Mn element is expected to be one of the promising dopants to induce and stabilize the metastable γ -Ga 2 O 3 , as well as optimize the optoelectronic performance of photodetectors.