Effect of electric and magnetic fields on impurity binding energy in zinc-blend symmetric InGaN/GaN multiple quantum dots

Abstract

The binding energy of ground state for hydrogenic impurity in multiple quantum dots is calculated in the framework of effective-mass approximation and using a variational method. It is shown that the binding energy is a function of the size of dots, impurity position and external fields strength. The binding energy has a maximum value when the impurity is located on the center of dots and decreases for other impurity positions. The external electric and magnetic fields change the magnitude and the position of peaks. PACS Codes 73.20.D; 71.21.La; 71.55.Eq