Abstract
A high-linearity CMOS power amplifier (PA) operating at 2.4 GHz with an integrated diode lineariser is presented. A diode-connected N-type MOS transistor is used to increase the Vgs of the power transistor as input power increases for linearity improvement. The CMOS PA fabricated in 180 nm CMOS technology achieved 32 dB small signal gain, 30.2 dBm Psat, 28.2 dBm P1 dB, and a 31.1% peak power added efficiency. By adopting the proposed diode lineariser, the output 1 dB is improved from 24.9 to 28.2 dBm.
Cite
CITATION STYLE
Ren, Z., Zhang, K., Liu, L., Liu, Z., Chen, X., Liu, D., & Zou, X. (2015). 2.4 GHz CMOS self-biased power amplifier with embedded diode lineariser. Electronics Letters, 51(19), 1501–1503. https://doi.org/10.1049/el.2015.0917
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