Nitride light-emitting diodes grown on Si (111) using a TiN template

Abstract

Nitride light-emitting diodes (LEDs) are grown on a Si (111) substrate with a TiN template. Transmission electron microscopy and x-ray diffraction indicate that the epitaxial relation follows Si (1,1,1) ∥TiN (1,1,1) ∥AlN (0,0,1), Si [1,1,0] ∥TiN [1,1,0], and Si [0,0,1] ∥TiN [0,0,1]. The reflectance measurement and simulation results indicate that the TiN can be adopted as a reflector to mitigate the substrate absorption problem, thus increasing the extraction efficiency of nitride LEDs grown on Si. © 2006 American Institute of Physics.