Comparing XPS and ToF-ERDA measurement of high-k dielectric materials

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Abstract

Compositional analysis of aluminium oxy-nitride (AlON) films deposited by reactive magnetron sputtering was performed using time-of-flight elastic recoil detection analysis (ToF-ERDA) and X-ray photoelectron spectroscopy (XPS) with sputter profiling. The composition profiles of the films depend on deposition conditions. The benefits of the different analytical methods are discussed and comparison of the profiles is performed. Conversion of the depth scale from XPS sputter time to a nm scale is implemented and the ToF-ERDA profile fitted. Densities of the deposited AlON films are calculated indicating differing film quality in agreement with the composition profile extracted. © 2008 IOP Publishing Ltd.

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Martin, D. M., Enlund, J., Kappertz, O., & Jensen, J. (2008). Comparing XPS and ToF-ERDA measurement of high-k dielectric materials. Journal of Physics: Conference Series, 100(1). https://doi.org/10.1088/1742-6596/100/1/012036

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