Abstract
We consider a silicon carbide thermistor with multilayer Au-TiB x-Ni 2 Si ohmic contacts intended for operation in the 77 to 450 K temperature range.
Cite
CITATION STYLE
APA
Boltovets, N. S. (2006). A silicon carbide thermistor. Semiconductor Physics, Quantum Electronics and Optoelectronics, 9(4), 67–70. https://doi.org/10.15407/spqeo9.04.067
Register to see more suggestions
Mendeley helps you to discover research relevant for your work.
Already have an account? Sign in
Sign up for free