Abstract
A GTO (gate turn off thyristor) model which simulates both the static negative differential resistance characteristics and the dynamic switching characteristics. The model consists of parallel connection of two-transistor, three-resistor (2T-3R) circuits which make it compatible with the SPICE program. An experimental validation test shows that the accuracy of the model can be improved by increasing the number of 2T-3R cells.
Cite
CITATION STYLE
Tsay, C. L., Fischl, R., Schwartzenberg, J., Kan, H., & Barrow, J. (1990). A high power circuit model for the gate turn off thyristor. In PESC Record - IEEE Annual Power Electronics Specialists Conference (pp. 390–397). Publ by IEEE. https://doi.org/10.1109/pesc.1990.131214
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