Measurement of phonon-exciton dephasing rate in GaN on sapphire by degenerate four-wave mixing

Abstract

The density and temperature dependence of the exciton dephasing time of two hexagonal GaN films on sapphire is measured using degenerate four-wave mixing (DFWM). The residual 4 ps dephasing time at low temperature and density is caused by exciton-impurity scattering. We present a theory of DFWM for various amount of inhomogeneous broadening. Good agreement of the temperature dependence of the dephasing time is found between theory and experiment. © 1998 American Institute of Physics.