Chemically amplified silicon containing resist for ArF excimer laser lithography

Abstract

A new positive chemically amplified resist which consists of novel methacrylate terpolymer with bis(trimethylsilyl)isopropyl group and a photoacid generator has been developed for ArF excimer laser photoresists. The polymer structure and properties was evaluated by 1H-NMR, UV, FT-IR, DSC, TGA and GPC. This new terpolymer demonstrates good thermal stability up to 135 °C, good dry-etching resistance, high transparency (75 %) for a ArF excimer laser exposure. Preliminary line and space patterns were obtained using an ArF excimer laser exposure system. © 1997 TAPJ.