Enhancing the dielectric properties of polyimide-based composites with donor-doped SiO2

Abstract

It is important that the dielectric material in the electrical system be able to handle the increasing applied electric strength owing to the rising demands for power supply reliability. Based on this, in this work, Nb2O5 donor doped SiO2 (NSO) particles were synthesized by high-temperature sintering method and successfully doped into the PI matrix. The maximum Eb of the composite material is 527.3 kV/mm, which is 64.2% higher than that of pure PI (321.1 kV/mm) and 34.8% higher than that of the SiO2/PI composite material (392.5 kV/mm) owning to the effect of donor doping on the carrier transport of the composite material. At the same time, it maintains excellent dielectric stability and lower dielectric loss even at 100 ℃. These consequences offer a new strategy for enhancing the integrated dielectric properties of polymer dielectrics in insulation fields.