I-U dependence of TlInX2 (X=Se,Te) single crystals: The Ohmic and S-type regions

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Abstract

Electrical conductivity measurements were performed on TlInSe2 and TlInTe2 single crystals. The corresponding current-voltage (I-U) characteristics consist of two parts: An Ohmic part, at low current densities, and a nonlinear one of the S type, at moderate and higher current densities. In the latter part a well-formed negative-differential-resistance (NDR) region appears. Acceptor levels and their concentrations were determined from lnp versus 103/T curves measured in the Ohmic region of the corresponding I-U curves. The nonlinear behavior of the I-U curves was studied at different ambient temperatures; the sample temperature and the threshold voltage of the NDR region were examined as a function of the current density and the ambient temperature, respectively. © 1991 The American Physical Society.

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Hanias, M., Anagnostopoulos, A. N., Kambas, K., & Spyridelis, J. (1991). I-U dependence of TlInX2 (X=Se,Te) single crystals: The Ohmic and S-type regions. Physical Review B, 43(5), 4135–4140. https://doi.org/10.1103/PhysRevB.43.4135

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