Laser-assisted organometallic chemical vapor deposition of films of rhodium and iridium

Abstract

High purity (less than 1% carbon) thin films of rhodium and iridium metal have been obtained by laser-assisted organometallic chemical vapor deposition. Gaseous (η5-C5H5)M(C2H 4)2 (M=Rh,Ir) was the organometallic precursor. Depositions were carried out in an atmosphere of He and H2 at room temperature and atmospheric pressure. Wavelength dependence studies of the rhodium precursor have shown that only irradiation into the compound's charge transfer band causes deposition. Deposits can also be obtained thermally. The films were analyzed by x-ray diffraction and x-ray photoelectron spectroscopy.