A 0.5 MP, 3D-Stacked, Voltage-Domain Global Shutter Image Sensor with NIR QE Enhancement, Event Detection Modes, and 90 dB Dynamic Range

Abstract

We introduce a compact voltage-domain global shutter CMOS image sensor for a wide range of applications including consumer, IoT, and industrial applications. With 0.5 MP and 2.79 µm pixels packed in a die size of only 2.3 mm × 2.8 mm, the sensor achieves more than 92% quantum efficiency (QE) in the visible wavelength and more than 36% at near-infrared (940 nm) all while drawing a mere 20 mW at a 10-bit, 30-frame-per-second operational mode. In this article, we focus on the architecture of the sensor and the design challenges encountered to fit all the necessary circuitry in such a limited footprint. Moreover, we detail the new solutions we have developed to meet the demanding specifications of low-power operation and high dynamic range (HDR).