Abstract
Thin films of poly (methyl methacrylate) (PMMA) were prepared on n-Si substrate and indium tin oxide (ITO) glass was prepared by spin coating. High frequency capacitance- voltage (C-V) and current-voltage (I-V) characterization were carried out on the Al/PMMA/n- Si and Al/PMMA/ITO glass structures, with the films as the insulator layer to evaluate the electrical properties. For the PMMA, the dielectric constant value obtained was about 3.9 at 1 MHz. The breakdown field strength of PMMA can be influenced by the impurities and surface charges or the interface states in the Si substrate. The average transmittance value of the PMMA/ITO glass layer was above 80% in the visible range.
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CITATION STYLE
Zhang, H. Q., Jin, Y., & Qiu, Y. (2015). The optical and electrical characteristics of PMMA film prepared by spin coating method. In IOP Conference Series: Materials Science and Engineering (Vol. 87). Institute of Physics Publishing. https://doi.org/10.1088/1757-899X/87/1/012032
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