Role of device architecture and AlOX interlayer in organic Schottky diodes and their interpretation by analytical modeling

Abstract

Considering the pivotal role of interfaces in controlling the performance of organic electronic devices, implications of metal/organic interfacial quality in a Schottky barrier diode (SBD) are investigated. The nature of metal/organic interfaces and the thin film quality of regioregular poly (3-hexylthiophene) based SBDs fabricated in different device architectures are investigated using experimental and theoretical modeling. The importance of oxidized aluminum nanostructures as an interlayer at the Schottky interface for the dramatic enhancement of the rectification ratio (>106 at ±5 V) has been demonstrated, which is attributed to suppressed leakage current due to the oxide layer and the formation of a charge double layer. Furthermore, electrical performances of all the SBDs were modeled in terms of an underlying particular phenomenon solely or with the combination of multiple physical phenomena. The combined modeling equation used in this work fits well for the different device architectures, which validates its generality in order to extract the device parameters.