Abstract
Pump-probe measurements resonant with the lowest energy transition of 2 nm thick AlInGaN multiple quantum wells show fast decay components between 3 to 21 ps from stimulated emission. On a slower timescale contributions from spontaneous recombination of carriers are also observed. The inferred threshold for stimulated emission is near 50 μJ/cm2. © 2006 WILEY-VCH Verlag GmbH & Co. KGaA,.
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CITATION STYLE
Hashemizadeh, S. A., Wells, J. P. R., Brown, J., Murzyn, P., Jones, B. D., Wang, T., … Skolnick, M. S. (2006). Stimulated emission and carrier dynamics in AlInGaN multi quantum wells. In Physica Status Solidi (C) Current Topics in Solid State Physics (Vol. 3, pp. 1958–1961). https://doi.org/10.1002/pssc.200565370
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