Application of porous layers and optimization of annealing of dopant and radiation defects to increase sharpness of p-n-junctions in a bipolar heterotransistors

Abstract

In this paper we consider an approach to increase sharpness of implanted-junctions rectifiers in a bipolar transistor fabricated in a semiconductor heterostructure. At one time with increasing of the sharpness homogeneity of dopant distributions in doped area increases. The approach based on application of inhomogeneity of the heterostructure and optimization of annealing time. To increase the both effects (increase sharpness of p-n-junctions and increasing of homogeneity of dopant distributions) at one time we consider porosity of materials of the heterostructure. Copyright © 2011 American Scientific Publishers All rights reserved.