Abstract
We demonstrate a method to grow height controlled, dislocation-free InGaAs quantum posts (QPs) on GaAs by molecular beam epitaxy (MBE) which is confirmed by structural investigations. The interband optical properties are compared to realistic 8-band k · p calculations of the electronic structure which fully account for strain and the structural properties of the QP. Using QPs embedded in n-i-p junctions we find wide range tunability of the interband spectrum and giant static dipole moments. © 2007 Elsevier B.V. All rights reserved.
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Krenner, H. J., Pryor, C., He, J., Zhang, J. P., Wu, Y., Morris, C. M., … Petroff, P. M. (2008). Growth and optical properties of self-assembled InGaAs quantum posts. Physica E: Low-Dimensional Systems and Nanostructures, 40(6), 1785–1789. https://doi.org/10.1016/j.physe.2007.09.165
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